Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure

	Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure
	Wang YS(王永顺); Li HR(李海蓉); Wu R(吴蓉); Li SY(李思渊)
刊名	半导体学报/Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
	2008-03-15
卷号	29 期号:3 页码:461-466
关键词	电力静电感应晶闸管反向转折电子-空穴等离子体寿命注入水平 Electron hole plasma Injection level Lifetime Power static induction thyristor (SITH) Reverse snapback phenomena (RSP)
ISSN号	02534177
其他题名	Mechanism of reverse snapback on I-V characteristics of power SITHs with buried gate structure
通讯作者	Wang, Y. (wangysh@mail.lzjtu.cn)
中文摘要	研究了静电感应晶闸管的反向转折特性.当工作在正向阻断态的阳极电压增大到某一临界值时,静电感应晶闸管的I-V曲线呈现出反向转折特性,甚至转向导通态.在综合考虑了工作机理、双注入效应、空间电荷效应、沟道中的电子-空穴等离子体和载流子寿命变化的基础上分析了静电感应晶闸管的反向转折特性.首次给出了反向转折机理的理论解释,并给出了估算转折电压和电流的数学表达式,在常用工艺参数范围内,计算结果和实验测量值基本一致.
学科主题	701.1 Electricity: Basic Concepts and Phenomena;714 Electronic Components and Tubes
语种	英语
内容类型	期刊论文
源URL	[http://202.201.7.4:8080/handle/262010/101037]
专题	物理科学与技术学院_期刊论文
推荐引用方式 GB/T 7714	Wang YS,Li HR,Wu R,et al. Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure[J]. 半导体学报/Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,2008,29(3):461-466.
APA	王永顺,李海蓉,吴蓉,&李思渊.(2008).Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure.半导体学报/Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors,29(3),461-466.
MLA	王永顺,et al."Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure".半导体学报/Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 29.3(2008):461-466.