Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures

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	Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures
	Zan, WY; Geng, W; Liu, HX; Yao, XJ
刊名	PHYSICAL CHEMISTRY CHEMICAL PHYSICS
	2016-01-28
卷号	18 期号:4 页码:3159-3164
ISSN号	1463-9076
通讯作者	Yao, XJ (reprint author), Lanzhou Univ, Dept Chem, State Key Lab Appl Organ Chem, Lanzhou 730000, Peoples R China.
学科主题	Chemistry; Physics
语种	英语
WOS记录号	WOS:000369506000097
内容类型	期刊论文
源URL	[http://ir.lzu.edu.cn/handle/262010/180316]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	Zan, WY,Geng, W,Liu, HX,et al. Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures[J]. PHYSICAL CHEMISTRY CHEMICAL PHYSICS,2016,18(4):3159-3164.
APA	Zan, WY,Geng, W,Liu, HX,&Yao, XJ.(2016).Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures.PHYSICAL CHEMISTRY CHEMICAL PHYSICS,18(4),3159-3164.
MLA	Zan, WY,et al."Electric-field and strain-tunable electronic properties of MoS2/h-BN/graphene vertical heterostructures".PHYSICAL CHEMISTRY CHEMICAL PHYSICS 18.4(2016):3159-3164.