Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor

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	Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor
	Feng, QL; Zhu, YM; Hong, JH; Zhang, M; Duan, WJ; Mao, NN; Wu, JX; Xu, H; Dong, FL; Lin, F
刊名	ADVANCED MATERIALS
	2014-04
卷号	26 期号:17 页码:2648-2653
关键词	chemical vapor deposition two-dimensional materials semiconductor alloys tunable bandgaps electrical properties molybdenum
ISSN号	0935-9648
通讯作者	Zhang, J (reprint author), Peking Univ, Ctr Nanochem,Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Key Lab Phys & Chem Nanodevices,Coll Chem & Mol E, Beijing 100871, Peoples R China.
学科主题	Chemistry; Science & Technology - Other Topics; Materials Science; Physics
语种	英语
WOS记录号	WOS:000335401100004
内容类型	期刊论文
源URL	[http://202.201.7.4/handle/262010/103070]
专题	化学化工学院_期刊论文
推荐引用方式 GB/T 7714	Feng, QL,Zhu, YM,Hong, JH,et al. Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor[J]. ADVANCED MATERIALS,2014,26(17):2648-2653.
APA	Feng, QL.,Zhu, YM.,Hong, JH.,Zhang, M.,Duan, WJ.,...&Xie, LM.(2014).Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor.ADVANCED MATERIALS,26(17),2648-2653.
MLA	Feng, QL,et al."Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor".ADVANCED MATERIALS 26.17(2014):2648-2653.