Novel highly stable semiconductors based on phenanthrene for organic field-effect transistors

	Novel highly stable semiconductors based on phenanthrene for organic field-effect transistors
	Tian HK ; Shi JW ; Dong SQ ; Yan DH ; Wang LX ; Geng YH ; Wang FS
刊名	chemical communications
	2006
期号	33 页码:3498-3500
关键词	THIN-FILM TRANSISTORS HIGH-PERFORMANCE HIGH-MOBILITY STABILITY ELECTRONICS PENTACENE OLIGOMERS POLYTHIOPHENES DERIVATIVES
ISSN号	1359-7345
通讯作者	geng yh
中文摘要	two novel phenanthrene-based conjugated oligomers were synthesized and used as p-channel semiconductors in field-effect transistors; they exhibit high mobility and excellent stability during long-time ambient storage and under uv irradiation.
收录类别	SCI
语种	英语
WOS记录号	WOS:000239915200006
公开日期	2010-08-17
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/15907]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Tian HK,Shi JW,Dong SQ,et al. Novel highly stable semiconductors based on phenanthrene for organic field-effect transistors[J]. chemical communications,2006(33):3498-3500.
APA	Tian HK.,Shi JW.,Dong SQ.,Yan DH.,Wang LX.,...&Wang FS.(2006).Novel highly stable semiconductors based on phenanthrene for organic field-effect transistors.chemical communications(33),3498-3500.
MLA	Tian HK,et al."Novel highly stable semiconductors based on phenanthrene for organic field-effect transistors".chemical communications .33(2006):3498-3500.