Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD

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	Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD
	Liu, J. X.; H. W. Liang; B. H. Li; Y. Liu; X. C. Xia; H. L. Huang; Q. A. Sandhu; R. S. Shen; Y. M. Luo and G. T. Du
刊名	Rsc Advances
	2016
卷号	6 期号:65
英文摘要	A novel method for finding the initial structure parameters of an optical system via the genetic algorithm (GA) is proposed in this research. Usually, optical designers start their designs from the commonly used structures from a patent database; however, it is time consuming to modify the patented structures to meet the specification. A high-performance design result largely depends on the choice of the starting point. Accordingly, it would be highly desirable to be able to calculate the initial structure parameters automatically. In this paper, a method that combines a genetic algorithm and aberration analysis is used to determine an appropriate initial structure of an optical system. We use a three-mirror system as an example to demonstrate the validity and reliability of this method. On-axis and off-axis telecentric three mirror systems are obtained based on this method. (C) 2015 Elsevier B.V. All rights reserved.
收录类别	SCI ; EI
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/57078]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Liu, J. X.,H. W. Liang,B. H. Li,et al. Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD[J]. Rsc Advances,2016,6(65).
APA	Liu, J. X..,H. W. Liang.,B. H. Li.,Y. Liu.,X. C. Xia.,...&Y. M. Luo and G. T. Du.(2016).Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD.Rsc Advances,6(65).
MLA	Liu, J. X.,et al."Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD".Rsc Advances 6.65(2016).