GaN-on-Si laser diode: open up a new era of Si-based optical interconnections

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	GaN-on-Si laser diode: open up a new era of Si-based optical interconnections
	Li, D. B.
刊名	Science Bulletin
	2016
卷号	61 期号:22
英文摘要	ZnO nanorod arrays decorated with NiO nanosheets on FTO substrates were prepared via a simple ultrasonic spray pyrolysis process combined with chemical bath method. The synthesized samples were characterized and analyzed by scanning electron microscopy and X-ray diffraction. The hierarchical and porous morphologies of ZnO/NiO core-shell nanoheterojunctions could be controlled by changing the growth time of NiO sheets. The "oriented attachment" and "self-assembly" crystal growth mechanisms were proposed to explain the formation of the ZnO/NiO nanostructures. Sensors based on the ZnO/NiO heterojunction nanostructure were fabricated and investigated for their ethanol-sensing properties. The result indicated that response was about 180% toward 100 ppm ethanol at an operating temperature of 200 degrees C. The growth approach in this work offers a new technique for the design and synthesis of transition metal oxide hierarchical nanoarrays which are promising for gas sensing applications.
收录类别	SCI ; EI
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/57012]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Li, D. B.. GaN-on-Si laser diode: open up a new era of Si-based optical interconnections[J]. Science Bulletin,2016,61(22).
APA	Li, D. B..(2016).GaN-on-Si laser diode: open up a new era of Si-based optical interconnections.Science Bulletin,61(22).
MLA	Li, D. B.."GaN-on-Si laser diode: open up a new era of Si-based optical interconnections".Science Bulletin 61.22(2016).