Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所 > 中科院长春光机所知识产出

	Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition
	Chen, F.; X. Fang; S. Wang; S. Niu; F. Fang; D. Fang; J. Tang; X. Wang; G. Liu and Z. Wei
刊名	Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
	2016
卷号	45 期号:4
英文摘要	The influence of growth temperature on the properties of aluminum nitride (AlN) films are grown by plasma enhanced atomic layer deposition (PEALD) at different deposition temperature. NH3 and trimethylaluminum (TMA) were used as precursors, 200, 500, 800, 1000, 1500 cycles AlN layers were deposited at 300, 350 and 370, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370. 2016, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.
收录类别	EI
语种	中文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/56861]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Chen, F.,X. Fang,S. Wang,et al. Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2016,45(4).
APA	Chen, F..,X. Fang.,S. Wang.,S. Niu.,F. Fang.,...&G. Liu and Z. Wei.(2016).Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,45(4).
MLA	Chen, F.,et al."Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 45.4(2016).