Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate

	Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate
	Lin J ; Ma DG
刊名	organic electronics
	2009
卷号	10 期号:2 页码:275-279
关键词	ORGANIC THIN-FILMS MEMORY TRANSPORT POLYMER VOLTAGE
ISSN号	1566-1199
通讯作者	ma dg
中文摘要	we have observed, respectively, a negative differential resistance (ndr) and switching conduction in current-voltage (i-v) characteristics of organic diodes based on copper phthalocyanine (cupc) film sandwiched between indium-tin-oxide (ito) and aluminum (al) by controlling the evaporation rate. the ndr effect is repeatable which can be well, controlled by sweep rate and start voltage, and the switching exhibits write-once-read-many-times (worm) memory characteristics. the traps in the organic layer and interfacial dipole have been used to explain the ndr effect and switching conduction. this opens up potential applications for cupc organic semiconductor in low power memory and logic circuits.
收录类别	SCI
语种	英语
WOS记录号	WOS:000264269600009
公开日期	2010-05-27
内容类型	期刊论文
源URL	[http://202.98.16.49/handle/322003/12245]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Lin J,Ma DG. Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate[J]. organic electronics,2009,10(2):275-279.
APA	Lin J,&Ma DG.(2009).Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate.organic electronics,10(2),275-279.
MLA	Lin J,et al."Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate".organic electronics 10.2(2009):275-279.