Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator

	Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator
	Li CH ; Pan F ; Wang XJ ; Wang LJ ; Wang H ; Wang HB ; Yan DH
刊名	organic electronics
	2009
卷号	10 期号:5 页码:948-953
关键词	FIELD-EFFECT TRANSISTORS DIELECTRICS FABRICATION SUBSTRATE LAYERS TA2O5
ISSN号	1566-1199
通讯作者	yan dh
中文摘要	organic thin-film transistors (otfts) using high dielectric constant material tantalum pentoxide (ta2o5) and benzocyclobutenone (bcbo) derivatives as double-layer insulator were fabricated. three metals with different work function, including al (4.3 ev), cr (4.5 ev) and au (5.1 ev), were employed as gate electrodes to study the correlation between work function of gate metals and hysteresis characteristics of otfts. the devices with low work function metal al or cr as gate electrode exhibited high hysteresis (about 2.5 v threshold voltage shift). however, low hysteresis (about 0.7 v threshold voltage shift) otfts were attained based on high work function metal au as gate electrode.
收录类别	SCI
语种	英语
WOS记录号	WOS:000268368400030
公开日期	2010-05-04
内容类型	期刊论文
源URL	[http://ir.ciac.jl.cn/handle/322003/11253]
专题	长春应用化学研究所_长春应用化学研究所知识产出_期刊论文
推荐引用方式 GB/T 7714	Li CH,Pan F,Wang XJ,et al. Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator[J]. organic electronics,2009,10(5):948-953.
APA	Li CH.,Pan F.,Wang XJ.,Wang LJ.,Wang H.,...&Yan DH.(2009).Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator.organic electronics,10(5),948-953.
MLA	Li CH,et al."Effect of the work function of gate electrode on hysteresis characteristics of organic thin-film transistors with Ta2O5/polymer as gate insulator".organic electronics 10.5(2009):948-953.