不同结构参数氮化镓基发光二极管芯片出光的蒙特卡罗方法模拟; Monte Carlo Simulation on Light Extraction Efficiency of GaN-based Light Emitting Diodes with Different Structure Parameters | |
洪图 ; 李书平 ; 康俊勇 | |
2009 | |
关键词 | 蒙特卡罗方法 光提取效率 发光二极管(LED) Monte Carlo method light extraction efficiency light-emitting diodes(LED) |
英文摘要 | 发光二极管(lEd)具有诸多优点,被人们看作是下一代照明器件.为了提高lEd的光提取效率,使用蒙特卡罗方法,通过计算机编程,模拟了正装gAn基发光二极管芯片出光,分析考察了影响光提取效率的因素.结果表明,光提取效率随着封装材料折射率的增大而明显提高的现象仅发生在低于透明导电薄膜折射率的区间,过度提高封装材料的折射率对提高光提取效率并非有利;随着蓝宝石衬底厚度的增加,光提取效率曲线迅速上升并趋于平缓;此外,低吸收系数的透明导电薄膜、高反射率的反射镜亦可以显著提高lEd光提取效率.; Light-emitting diodes(LEDs) have many advantages and are regarded as the next generation light source.To improve the light extraction efficiency,light extraction simulation of face-up GaN-based light-emitting diodes(LEDs) with Monte Carlo method is presented.It is shown that only when the refractive index of encapsulation material ranges from the refractive index of air to that of transparent conductive thin film,the light extraction efficiency can be improved significantly by increasing refractive index of encapsulation material.Raising the refractive index of encapsulation material over that of transparent conductive thin film won't obviously increase the light extraction efficiency;when the sapphire thickness increases,the light extraction efficiency will increase rapidly first and then be saturated;besides,transparent conductive thin film with low absorption coefficient and high reflectivity bottom reflector can also improve the light extraction efficiency significantly.; 国家自然科学基金重点专项(60827004);国家自然科学基金(60776066)资助 |
语种 | zh_CN |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/105086] ![]() |
专题 | 航空航天-已发表论文 |
推荐引用方式 GB/T 7714 | 洪图,李书平,康俊勇. 不同结构参数氮化镓基发光二极管芯片出光的蒙特卡罗方法模拟, Monte Carlo Simulation on Light Extraction Efficiency of GaN-based Light Emitting Diodes with Different Structure Parameters[J],2009. |
APA | 洪图,李书平,&康俊勇.(2009).不同结构参数氮化镓基发光二极管芯片出光的蒙特卡罗方法模拟.. |
MLA | 洪图,et al."不同结构参数氮化镓基发光二极管芯片出光的蒙特卡罗方法模拟".(2009). |
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