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Comparison of glass etching properties between HCl and HNO3 solution
Tao, Wei ; Lv, Wenlong ; Zhan, Zhan ; Zuo, Wenjia ; Qiu, Xiaochun ; Wang, Linyun ; Sun, Daoheng ; Sun DH(孙道恒)
2012
英文摘要Conference Name:7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. Conference Address: Kyoto, Japan. Time:March 5, 2012 - March 8, 2012.; IEEE; IEEE Nanotechnology Council; The Murata Science Foundation; The Kyoto University Foundation; Office of Naval Research Global; A comparison of glass etching properties between HCl and HNO3 solution is presented in this paper, which allows us to predict the etched product's shape under a variety of etching conditions, mask compensation and multiple processing steps. Four conclusions could be draw from the experiments. First, the best concentration ratio of the etching solution to protect the mask from damage and get a channel with depth of 40 渭m is HF:HCl:NH 4F=5.5mol/L:4mol/L:2.5mol/L. Second, as the temperature increases, the longitudinal etching rate increases. However, the temperature has little influence on the lateral erosion ratio when the temperature gets high. Third, HCl has a better surface morphology against HNO3 as an addition to solution. Last, the mask will introduce strain because of sputtering, which is harmful to the glass etching. 漏 2012 IEEE.
语种英语
出处http://dx.doi.org/10.1109/NEMS.2012.6196838
出版者IEEE Computer Society
内容类型其他
源URL[http://dspace.xmu.edu.cn/handle/2288/86234]  
专题物理技术-会议论文
推荐引用方式
GB/T 7714
Tao, Wei,Lv, Wenlong,Zhan, Zhan,et al. Comparison of glass etching properties between HCl and HNO3 solution. 2012-01-01.
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