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	Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si
	Feng, Zhe Chuan ; Chen, Cheng ; Xu, Qiang ; Mendis, Suwan P. ; Jang, Ling-Yun ; Tin, Chin-Che ; Lee, Kung-Yen ; Liu, Chee Wee ; Wu, Zhengyun ; Qiu, Zhi Ren ; Wu ZY(吴正云)
	2012
关键词	Bond length Raman scattering Synchrotron radiation X ray absorption
英文摘要	Conference Name:14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011. Conference Address: Cleveland, OH, United states. Time:September 11, 2011 - September 16, 2011.; Cree; Keithley Instruments; AIXTRON; Dow Corning Electronics Solutions; General Electric; FTIR, Visible and UV Raman scattering, as well as synchrotron radiation X-ray absorption, in combination, have been employed to investigate a series of CVD grown 3C-SiC/Si (100). Significant results on the optical and atomic bonding properties are obtained from these comparative studies. 漏 (2012) Trans Tech Publications.
语种	英语
出处	http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.505
出版者	Trans Tech Publications Ltd
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86232]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Feng, Zhe Chuan,Chen, Cheng,Xu, Qiang,et al. Raman scattering and X-ray absorption from CVD grown 3C-SiC on Si. 2012-01-01.

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