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	Study on semiconductor materials with interaction of beta radiation with GaN
	San, Hai Shen ; Yao, Shu Li ; Zhang, Qiang ; Chen, Ran Bin ; San HS(伞海生)
	2013
关键词	Information science Materials science Monte Carlo methods Nuclear batteries Semiconductor junctions
英文摘要	Conference Name:2013 3rd International Conference on Information Science, Automation and Material System, ISAM 2013. Conference Address: Guangzhou, China. Time:April 13, 2013 - April 14, 2013.; International Science and Education Researcher Association, China; Beijing Gireida Education Research Center; VIP-Information Conference Center, China; Wide-band gap semiconductor GaN is a promising material for direct-conversion nuclear micro-batteries to meet energy requirement for micro-systems. The properties of semiconductor GaN materials were studied by the interaction of beta radiation with GaN. By the Monte Carlo simulation, the trajectories of incident beta particles in GaN and the total energy deposition were obtained, which provide an optimal design in p-n junction width of GaN. ? (2013) Trans Tech Publications, Switzerland.
语种	英语
出处	http://dx.doi.org/10.4028/www.scientific.net/AMR.703.63
出版者	TRANS TECH PUBLICATIONS LTD
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86190]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	San, Hai Shen,Yao, Shu Li,Zhang, Qiang,et al. Study on semiconductor materials with interaction of beta radiation with GaN. 2013-01-01.

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