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	Discussion on the lapping and polishing process of 4H-SiC wafer
	Cheng, Wei ; Yin, Yugang ; Li, Yipan ; Zhang, Haoer ; Zhang, Shiming ; Wang, Lingyun ; Sun, Daoheng ; Sun DH(孙道恒)
	2013
关键词	Lapping Silicon carbide Surface roughness
英文摘要	Conference Name:8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013. Conference Address: Suzhou, China. Time:April 7, 2013 - April 10, 2013.; Institute of Electrical and Electronics Engineers (IEEE); IEEE Nanotechnology Council (NTC); Peking University; Soochow University; Chinese Academy of Sciences; In order to achieve a high quality silicon carbide (SiC) film, the lapping and polishing process scheme was introduced in this paper. The ductile iron was utilized as lapping disc material, which can quickly thin the SiC wafer to the film of uniform thickness. After three-step lapping process, the thickness of the SiC wafer was reduced to 35 ± 4μm. In the process of polishing, a rough polishing and a fine polishing were studied by selecting suitable polishing liquid, polishing pad and parameters. The results show that the lapping and polishing procedure can realize large area and high quality SiC films: the film thickness, 30 ± 2μm and the surface roughness RMS, 0.69nm. ? 2013 IEEE.
语种	英语
出处	http://dx.doi.org/10.1109/NEMS.2013.6559856
出版者	IEEE Computer Society
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86156]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Cheng, Wei,Yin, Yugang,Li, Yipan,et al. Discussion on the lapping and polishing process of 4H-SiC wafer. 2013-01-01.

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