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	Characteristic of ZnO films prepared by the sol-gel process - art no 69842E
	He, Guannan ; Huang, Bo ; Wu, Suntao ; Li, Jing ; Li J(李静)
	2008
关键词	AL THIN-FILMS PULSED-LASER DEPOSITION ZINC-OXIDE FILMS OPTICAL-PROPERTIES ANNEALING TEMPERATURE MICROSTRUCTURE
英文摘要	Conference Name:6th International Conference on Thin Film Physics and Applications. Conference Address: Shanghai, PEOPLES R CHINA. Time:SEP 25-28, 2007.; ZnO thin films with or without Al doping were grown on the glass substrates by sol-gel method and subsequently annealing treatments at high temperatures were performed to optimize films' morphologies and properties. The crystal structures of ZnO films were characterized by X-ray diffraction (XRD), and XRD spectra show a shift of (002) diffraction peak to the higher 20 values with changing the Al-doping concentration. Optical transmittance spectrums exhibit a sharp absorption edge at around 380nm undergoing a blue shift induced by aluminum doping. An apparent particle size decreasing was displayed by scanning electron microscopy (SEM) images with the Al-doping concentration increasing.
语种	英语
出处	http://dx.doi.org/10.1117/12.792117
出版者	P SOC PHOTO-OPT INS
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/86073]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	He, Guannan,Huang, Bo,Wu, Suntao,et al. Characteristic of ZnO films prepared by the sol-gel process - art no 69842E. 2008-01-01.

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