Fabrication of ZnO Thin Film schottky ultraviolet photodetector - art no 67221W | |
Huang, Bo ; He, Guan-Nan ; Wu, Yue-Bo ; Zhang, Liang-Tang ; Li, Jing ; Guo, Dong-Hui ; Wu, Sun-Tao ; Li J(李静) ; Guo DH(郭东辉) | |
2007 | |
关键词 | CRYSTALS |
英文摘要 | Conference Name:3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies. Conference Address: Chengdu, PEOPLES R CHINA. Time:JUL 08-12, 2007.; ZnO films, with C-axis preferred orientation, were deposited on SiO2/n- Si by radio frequency (RF) magnetron sputtering. The interdigital metal-semiconductor-metal NEW ultraviolet (UV) photodetectors were fabricated by using Ag as Schottky contact metal. For comparison, ZnO Schottky diodes were also fabricated by using Ag-ZnO-Al structures. Aluminum was used to form Ohmic contacts. Current voltage (I-V) characteristics of these devices have been analyzed. The Schottky diodes exhibit distinct rectifying 14 characteristics. The barrier height of the Ag/ZnO Schottky contacts is around 0.65 eV. The leakage current for MSM photodetector is less then 6 x 10(-7)A at a bias of 5V. The photoresponsivity of MSM photodetector is much higher in the ultraviolet range than in the visible range. The UV/visible (350nm/500nm) rejection ratio is more than one order of magnitude. The photoresponsivity of MSM detector exhibits a maximum value around 370 nm. |
语种 | 英语 |
出处 | http://dx.doi.org/10.1117/12.783033 |
出版者 | P SOC PHOTO-OPT INS |
内容类型 | 其他 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/85951] ![]() |
专题 | 物理技术-会议论文 |
推荐引用方式 GB/T 7714 | Huang, Bo,He, Guan-Nan,Wu, Yue-Bo,et al. Fabrication of ZnO Thin Film schottky ultraviolet photodetector - art no 67221W. 2007-01-01. |
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