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	Fabrication of ZnO Thin Film schottky ultraviolet photodetector - art no 67221W
	Huang, Bo ; He, Guan-Nan ; Wu, Yue-Bo ; Zhang, Liang-Tang ; Li, Jing ; Guo, Dong-Hui ; Wu, Sun-Tao ; Li J(李静) ; Guo DH(郭东辉)
	2007
关键词	CRYSTALS
英文摘要	Conference Name:3rd International Symposium on Advanced Optical Manufacturing and Testing Technologies. Conference Address: Chengdu, PEOPLES R CHINA. Time:JUL 08-12, 2007.; ZnO films, with C-axis preferred orientation, were deposited on SiO2/n- Si by radio frequency (RF) magnetron sputtering. The interdigital metal-semiconductor-metal NEW ultraviolet (UV) photodetectors were fabricated by using Ag as Schottky contact metal. For comparison, ZnO Schottky diodes were also fabricated by using Ag-ZnO-Al structures. Aluminum was used to form Ohmic contacts. Current voltage (I-V) characteristics of these devices have been analyzed. The Schottky diodes exhibit distinct rectifying 14 characteristics. The barrier height of the Ag/ZnO Schottky contacts is around 0.65 eV. The leakage current for MSM photodetector is less then 6 x 10(-7)A at a bias of 5V. The photoresponsivity of MSM photodetector is much higher in the ultraviolet range than in the visible range. The UV/visible (350nm/500nm) rejection ratio is more than one order of magnitude. The photoresponsivity of MSM detector exhibits a maximum value around 370 nm.
语种	英语
出处	http://dx.doi.org/10.1117/12.783033
出版者	P SOC PHOTO-OPT INS
内容类型	其他
源URL	[http://dspace.xmu.edu.cn/handle/2288/85951]
专题	物理技术－会议论文
推荐引用方式 GB/T 7714	Huang, Bo,He, Guan-Nan,Wu, Yue-Bo,et al. Fabrication of ZnO Thin Film schottky ultraviolet photodetector - art no 67221W. 2007-01-01.

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