| Er,O离子共注入GaAs的二次离子质谱的研究; SECONDARY ION MASS SPECTROMETRY of ERBIUM AND OXYGEN CO IMPLANTED IN GaAs | |
| 陈辰嘉 ; 李海涛 ; 王学忠 ; 周必忠 ; 雷红兵 ; 肖方方 | |
| 1997 | |
| 关键词 | 铒 氧离子共注入 二次离子质谱 光致发光 Er O ions co implanted secondary ion mass spectrometry photoluminescence. |
| 英文摘要 | 在Ⅲ-V族半导体gAAS外延层上共注入Er和O离子（gAAS：Er，O）.经面对面优化退火后，光致发光（PHOTOluMInESCEnCE-Pl）谱中观测到对应Er3＋第一激发态到基态4I13/2-4I15/2跃迁，其相对强度较单注入Er的gAAS（gAAS：Er）增强10倍，且谱线变窄.从二次离子质谱（SECOndAryIOnMASSPECTrOMETry-SIMS）和卢瑟福背散射实验给出退火前后Er在gAAS：Er样品中的剖面分布.SIMS测量分别给出O注入前后Er和O在gAAS：Er，O中的深度剖面分布，分析表明Er和O共注入后形成光学激活有效的发光中心.; Er and O ions were co implanted in Ⅲ Ⅴ compound semiconductor GaAs (GaAs:Er,O).AFter Face to Face annealing the sharp photoluminescence (PL) spectra were observed at 1.538μm, which correspond to the transition From the First excited state 4I 13/2 to the ground state 4I 15/2 of Er 3+ .The intensity of PL was enhanced about ten times in comparison with the only Er implanted GaAs sample: GaAs:Er. Depth profiles of Er implanted concentration were obtained and analyzed by Secondary Ion Mass Spectrometry(SIMS) and RutherFord Back Scattering(RBS) measurements as implanted and annealed.Depth profiles of Er and O co implanted were analyzed and studied by SIMS.The results indicate that a kind of optically active eFFicient luminescence center is Formed in GaAs:Er,O.; 国家自然科学基金;北京大学稀土材料化学应用国家重点实验室基金 |
| 语种 | zh_CN |
| 内容类型 | 期刊论文 |
| 源URL | [http://dspace.xmu.edu.cn/handle/2288/121560]  |
| 专题 | 物理技术－已发表论文 |
| 推荐引用方式 GB/T 7714 | 陈辰嘉,李海涛,王学忠,等. Er,O离子共注入GaAs的二次离子质谱的研究, SECONDARY ION MASS SPECTROMETRY of ERBIUM AND OXYGEN CO IMPLANTED IN GaAs[J],1997. |
| APA | 陈辰嘉,李海涛,王学忠,周必忠,雷红兵,&肖方方.(1997).Er,O离子共注入GaAs的二次离子质谱的研究.. |
| MLA | 陈辰嘉,et al."Er,O离子共注入GaAs的二次离子质谱的研究".(1997). |
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