AIN、GaN立方晶体的静态性质和AIN/GaN异质结的价带偏移; The Static Properties of AlN and GaN,and the Valence-band ofFsets of AlN/GaN Heterojunction | |
何国敏 ; 郑永梅 ; 王仁智 | |
1997 | |
关键词 | 静态性质 应变层异质结 价带偏移 Static Properties Strained Layer Heterojunction Valence-band ofFsets |
英文摘要 | 采用lMTO能带从头计算方法,计算了闪锌矿(立方)结构AIn和gAn的静态性质;用平均键能方法,预言了Aln与gAn自由应变生长、以Aln为衬底和以gAn为衬底等三种不同应变状态下Aln/gAn应变层异质结的△EV值;最后,采用超原胞(AIn)n(gAn)n(001),(n=1,3,5)界面自洽计算方法,考察了超晶格中平均键能EM的“对齐”程度和验证了价带偏移△EV计算结果的准确性。; The static properties of cubic AlN and GaN (zinc-blende structure) are calculated by ab initio LMTO method.Using average bonding energy method,the valence-band ofFsets of AlN/GaN strained layer heterojunction under three strained conditions (i.e.growing GaN layer on substrate of AlN,growing AlN layer on substrate of GaN,and AlN and GaN strained Freely to Form the hetero-junction) are predicted.Finally, the calculated results of valence-band ofFsets △Ev and the "alignment" of average bonding energy Em in strained layer superlattice (AlN )n (GaN)n (001), (n = 1,3, 5) are veriFied by supercell selF-consistent calculation.; 福建省自然科学基金 |
语种 | zh_CN |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/121557] |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | 何国敏,郑永梅,王仁智. AIN、GaN立方晶体的静态性质和AIN/GaN异质结的价带偏移, The Static Properties of AlN and GaN,and the Valence-band ofFsets of AlN/GaN Heterojunction[J],1997. |
APA | 何国敏,郑永梅,&王仁智.(1997).AIN、GaN立方晶体的静态性质和AIN/GaN异质结的价带偏移.. |
MLA | 何国敏,et al."AIN、GaN立方晶体的静态性质和AIN/GaN异质结的价带偏移".(1997). |
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