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	N型掺杂应变Ge发光性质; The optical property of tensile-strained n-type doped Ge
	黄诗浩 ; 李成 ; 陈城钊 ; 郑元宇 ; 赖虹凯 ; 陈松岩
	2012
关键词	应变 N型掺杂Ge 量子效率 光增益 strain n-type doped germanium internal quantum efficiency optical gain
英文摘要	应变锗材料具有准直接带特性,而且与标准硅工艺兼容,成为实现硅基发光器件重要的候选材料之一.本文基于VAn dE WAllE形变势理论,计算了应变情况下半导体gE材料的能带结构以及载流子在导带中的分布;通过分析载流子直接带和间接带问的辐射复合以及俄歇复合、位错等引起的非辐射复合的竞争,计算了n型掺杂张应变gE材料直接带跃迁的内量子效率和光增益等发光性质.结果表明,张应变可有效增强gE材料直接带隙跃迁发光.在1.5%张应变条件下,n型掺杂gE的最大内量子效率可以达到74.6%,光增益可以与Ⅲ-V族材料相比拟.; Tensile-strained germanium is one of the promsing materials for Si-based photonic devices due to its quasi-direct band and compatiblility with silicon technology.The band structure of tensile-strained germanium is investigated based on the theory of van de Walle deformed potential.The carrier distributions in the conduction bands at T and L vallies under the strain,and the n-type doping concentratoin in germanium are analyzed.Considering the competition between radiative recombinations atΓand L vallies and Auger recombination,as well as dislocation induced non-radiative recombination,internal quantum efficiency and optical gain for direct band transition in n-type Ge are calculated.It is shown that 74.6%internal quantum efficiency can be obtained in the 1.5%tensile-strained n-type doped Ge under carrier injection and a strong optical gain is predicted,which is comparable to those ofⅢ-Ⅴmaterials.; 国家重点基础研究发展计划(批准号:2007CB613404);国家自然科学基金(批准号:61036003;60837001);中央高校基础业务费项目(批准号:2010121056);信息功能材料国家重点实验室开放课题资助的课题----
语种	zh_CN
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/121413]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	黄诗浩,李成,陈城钊,等. N型掺杂应变Ge发光性质, The optical property of tensile-strained n-type doped Ge[J],2012.
APA	黄诗浩,李成,陈城钊,郑元宇,赖虹凯,&陈松岩.(2012).N型掺杂应变Ge发光性质..
MLA	黄诗浩,et al."N型掺杂应变Ge发光性质".(2012).

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