QQ客服 官方微博 反馈留言

	In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能; Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers
	朱丽虹 ; 蔡加法 ; 李晓莹 ; 邓彪 ; 刘宝林
	2010
关键词	金属有机物化学气相沉积 InGaN/GaN多量子阱 发光二极管 内量子效率 metal organic chemical vapor deposition InGaN /GaN multiple quantum wells light-emitting diode internal quantum efficiency
英文摘要	利用金属有机物化学气相沉积系统在蓝宝石衬底上通过有源层的变温生长,得到In组分渐变的量子阱结构,从而获得具有三角形能带结构的IngAn/gAn多量子阱发光二极管(lEd)(简称三角形量子阱结构lEd).变温光致发光谱结果表明,相对于传统具有方形能带结构的量子阱lEd(简称方形量子阱结构lEd),三角形量子阱结构有效提高了量子阱中电子和空穴波函数的空间交叠,从而增加了lEd的内量子效率;电致发光谱结果表明,三角形量子阱结构lEd器件与传统结构lEd器件相比,明显改善了发光峰值波长随着电流的蓝移现象.通过以上的结果比较,三角形量子阱结构lEd比传统结构lEd具有更高的发光效率.; InGaN/GaN triangular shaped multiple quantum wells(MQWs) grown on sapphire substrate were adopted as an active layer of light-emitting diodes(LEDs) by modulating In content in well layers.The temperature dependence of the normalized integrated photoluminescence(PL) intensity showed that the overlap of the electron and hole wave-functions of the LEDs with triangular shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures,which improves the internal quantum efficiency(IQE) to a certain degree.On the other hand,it was found that the blue shift of the peak energy as a function of injection current is improved for the device with triangular shaped MQW structure from the electroluminescence(EL) spectra of the two series devices.The comparison above indicates that the triangular MQW LEDs are more efficient and more stable.; 国家自然科学基金(批准号:60276029);国家高技术研究发展计划(批准号:2004AA311020;2006AA03Z409)资助的课题----
语种	zh_CN
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/121338]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	朱丽虹,蔡加法,李晓莹,等. In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能, Luminous performance improvement of InGaN/GaN light-emitting diodes by modulating In content in well layers[J],2010.
APA	朱丽虹,蔡加法,李晓莹,邓彪,&刘宝林.(2010).In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能..
MLA	朱丽虹,et al."In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能".(2010).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。