Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells

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	Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells
	Lv, Xue-Qin ; Zhang, Jiang-Yong ; Ying, Lei-Ying ; Liu, Wen-Jie ; Hu, Xiao-Long ; Zhang, Bao-Ping ; Qiu, Zhi-Ren ; Kuboya, Shigeyuki ; Onabe, Kentaro ; Zhang JY(张江勇) ; Zhang BP(张保平)
刊名	http://dx.doi.org/10.1186/1556-276X-7-605
	2012
关键词	Binding energy Emission spectroscopy Excitons Linewidth Phonon scattering Photoluminescence
英文摘要	Photoluminescence (PL) spectra were measured as a function of well width (LW) and temperature in ZnO/ Mg0.1Zn0.9O single quantum wells (QWs) with graded thickness. The emission linewidth (full width at half maximum) was extracted from the emission spectra, and its variation as a function of LW was studied. The inhomogeneous linewidth obtained at 5 K was found to decrease with increasing LW from 1.8 to 3.3 nm due to the reduced potential variation caused by the LW fluctuation. Above 3.3 nm, however, the linewidth became larger with increasing LW, which was explained by the effect related with defect generation due to strain relaxation and exciton expansion in the QW. For the homogenous linewidth broadening, longitudinal optical (LO) phonon scattering and impurity scattering were taken into account. The LO phonon scattering coefficient 螕LO and impurity scattering coefficient 螕imp were deduced from the temperature dependence of the linewidth of the PL spectra. Evident reduction of 螕LO with decreasing LW was observed, which was ascribed to the confinement-induced enhancement of the exciton binding energy. Different from 螕LO, a monotonic increase in 螕imp was observed with decreasing LW, which was attributed to the enhanced penetration of the exciton wave function into the barrier layers. 漏 2012 Lv et al.
语种	英语
出版者	Springer New York
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/92169]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Lv, Xue-Qin,Zhang, Jiang-Yong,Ying, Lei-Ying,et al. Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells[J]. http://dx.doi.org/10.1186/1556-276X-7-605,2012.
APA	Lv, Xue-Qin.,Zhang, Jiang-Yong.,Ying, Lei-Ying.,Liu, Wen-Jie.,Hu, Xiao-Long.,...&张保平.(2012).Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells.http://dx.doi.org/10.1186/1556-276X-7-605.
MLA	Lv, Xue-Qin,et al."Well-width dependence of the emission linewidth in ZnO/MgZnO quantum wells".http://dx.doi.org/10.1186/1556-276X-7-605 (2012).