Numerical modeling and experimental verification of through silicon via (TSV) filling in presence of additives

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	Numerical modeling and experimental verification of through silicon via (TSV) filling in presence of additives
	Zhu, Yunhui ; Ma, Shenglin ; Sun, Xin ; Chen, Jing ; Miao, Min ; Jin, Yufeng ; Ma SL(马盛林)
刊名	http://dx.doi.org/10.1016/j.mee.2013.12.002
	2014-04-01
关键词	COPPER INTEGRATION
英文摘要	National Science and Technology Major Project of China [2009ZX02038-02]; Copper electro-chemical deposition (ECD) of through silicon via (TSV) is a key challenge of 3D integration. This paper presents a numerical modeling of TSV filling concerning the influence of the accelerator and the suppressor. The diffusion-adsorption model was used in the simulation and effects of the additives were incorporated in the model. The boundary conditions were derived from a set of experimental Tafel curves with different concentrations of additives, which provided a quick and accurate way for copper ECD process prediction without complicated surface kinetic parameters fitting. The level set method (LSM) was employed to track the copper and electrolyte interface. The simulation results were in good agreement with the experiments. For a given feature size, the current density for superfilling could be predicted, which provided a guideline for ECD process optimization. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.
语种	英语
出版者	ELSEVIER SCIENCE BV
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/92043]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhu, Yunhui,Ma, Shenglin,Sun, Xin,et al. Numerical modeling and experimental verification of through silicon via (TSV) filling in presence of additives[J]. http://dx.doi.org/10.1016/j.mee.2013.12.002,2014.
APA	Zhu, Yunhui.,Ma, Shenglin.,Sun, Xin.,Chen, Jing.,Miao, Min.,...&马盛林.(2014).Numerical modeling and experimental verification of through silicon via (TSV) filling in presence of additives.http://dx.doi.org/10.1016/j.mee.2013.12.002.
MLA	Zhu, Yunhui,et al."Numerical modeling and experimental verification of through silicon via (TSV) filling in presence of additives".http://dx.doi.org/10.1016/j.mee.2013.12.002 (2014).