Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si073Ge027 epilayer

CORC > 厦门大学 > 物理技术－已发表论文

	Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si073Ge027 epilayer
	Tang, Mengrao ; Lin, Guangyang ; Li, Cheng ; Wang, Chen ; Zhang, Maotian ; Huang, Wei ; Lai, Hongkai ; Chen, Songyan ; Li C(李成) ; Huang W(黄巍) ; Chen SY(陈松岩)
刊名	http://dx.doi.org/10.1063/1.4813778
	2013
关键词	FILMS NI
英文摘要	National Basic Research Program of China [2012CB933503, 2013CB632103]; National Natural Science Foundation of China [61176092, 61036003, 60837001]; Ph.D. Programs Foundation of Ministry of Education of China [20110121110025]; Fundamental Research Funds for the Central Universities [2010121056]; Ge segregation and strain evolution in the SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer are studied in temperature range of 300-900 degrees C. The continuous NiSiGe film on SiGe epilayer is formed at 500 degrees C and below, which applies tensile stress on the underlying unreacted SiGe layer. When temperature rises to 600 degrees C and above, the NiSiGe film begins to agglomerate, resulting in the formation of Ge-rich SiGe regions scattering among NiSiGe grains in the surface due to Ge lateral segregation from NiSiGe. During these processes, Ge is preferentially rejected from the NiSiGe grains giving rise to the transformation of NiSiGe to NiSi with increase of temperature and the increase of Ge content in the Ge-rich SiGe at the NiSiGe grain boundaries. The enlarged lattice constant of Ge-rich SiGe and the volume expansion of NiSiGe grains make the Ge-rich SiGe alloy under compressive strain. No significant Ge segregation is observed between Ni(SiGe) and the underlying SiGe layer even at higher temperature. (C) 2013 AIP Publishing LLC.
语种	英语
出版者	AMER INST PHYSICS
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/91876]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Tang, Mengrao,Lin, Guangyang,Li, Cheng,et al. Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si073Ge027 epilayer[J]. http://dx.doi.org/10.1063/1.4813778,2013.
APA	Tang, Mengrao.,Lin, Guangyang.,Li, Cheng.,Wang, Chen.,Zhang, Maotian.,...&陈松岩.(2013).Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si073Ge027 epilayer.http://dx.doi.org/10.1063/1.4813778.
MLA	Tang, Mengrao,et al."Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si073Ge027 epilayer".http://dx.doi.org/10.1063/1.4813778 (2013).