Optical properties of ZnO/MgZnO quantum wells with graded thickness | |
Lv, X. Q. ; Zhang, J. Y. ; Liu, W. J. ; Hu, X. L. ; Chen, M. ; Zhang, B. P. ; Lv XQ(吕雪芹) ; Zhang BP(张保平) | |
刊名 | http://dx.doi.org/10.1088/0022-3727/44/36/365401
![]() |
2011-09-14 | |
关键词 | TIME-RESOLVED PHOTOLUMINESCENCE TEMPERATURE-DEPENDENCE STIMULATED-EMISSION ZNO/(MG |
英文摘要 | National Natural Science Foundation of China [60876007, 10974165]; State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-sen University) [KF2010-ZD-08]; The optical properties of ZnO/Mg(0.1)Zn(0.9)O single quantum wells with graded well width were studied using temperature-dependent photoluminescence (PL) spectroscopy. The ratio of emission intensity between the well and barrier layers was found to increase monotonically when the sample temperature was increased from 78 to 210 K, indicating an efficient carrier transfer from the barrier to the well. The emission peak of the Mg(0.1)Zn(0.9)O barrier exhibited a blueshift first and then a redshift with increasing temperature, which was attributed to the repopulation of localized carriers in energy-tail states induced by alloy composition fluctuations. Such an anomalous temperature dependence of PL energy contributed to the carrier transfer. On the other hand, the emission from the well layer exhibited a transition behaviour from localized to free excitons with increasing temperature. A further analysis of the temperature-dependent emission peaks of different well widths revealed that the localization energy of excitons was related to the potential variation induced mainly by well width fluctuations. Moreover, by comparing experimental results with calculation, the separation between the quantum confinement regime and quantum-confined Stark regime was found to occur at a well width of about 3 nm. |
语种 | 英语 |
出版者 | J PHYS D APPL PHYS |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/91619] ![]() |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | Lv, X. Q.,Zhang, J. Y.,Liu, W. J.,et al. Optical properties of ZnO/MgZnO quantum wells with graded thickness[J]. http://dx.doi.org/10.1088/0022-3727/44/36/365401,2011. |
APA | Lv, X. Q..,Zhang, J. Y..,Liu, W. J..,Hu, X. L..,Chen, M..,...&张保平.(2011).Optical properties of ZnO/MgZnO quantum wells with graded thickness.http://dx.doi.org/10.1088/0022-3727/44/36/365401. |
MLA | Lv, X. Q.,et al."Optical properties of ZnO/MgZnO quantum wells with graded thickness".http://dx.doi.org/10.1088/0022-3727/44/36/365401 (2011). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论