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	Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x
	Ke, S. H. ; Wang, R. Z. ; Huang, M. C. ; Huang MC(黄美纯)
刊名	http://dx.doi.org/10.1063/1.362896
	1996-07-15
关键词	COMMON-ANION-RULE ELECTRONIC-STRUCTURE SEMICONDUCTOR HETEROJUNCTIONS DEFORMATION POTENTIALS ALLOYS INTERFACES LINEUPS HETEROSTRUCTURES DISCONTINUITIES SUPERLATTICES
英文摘要	A full description is presented of the ''average bond energy model,'' which was developed for the determination of valence-band offset at heterojunctions, It is shown that this model is related conceptually to Harrison's tight binding ''pinned'' model, while it overcomes all of the shortcomings of the latter. Its final form turns out to be a generalization of Cardona's dielectric-midgap-energy model, The average bond energy model is also shown related to Tersoff's charge-nentrality-point model. In this article, this model is used in conjunction with a cluster expansion method to determine systematically the valence-band offsets at four strained alloy type heterointerfaces, Si,Ge,InP,GaAs/GexSi1-x as functions of the alloy composition x. Good agreement is found between our results and available experimental data. (C) 1996 American Institute of Physics.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70578]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Ke, S. H.,Wang, R. Z.,Huang, M. C.,et al. Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x[J]. http://dx.doi.org/10.1063/1.362896,1996.
APA	Ke, S. H.,Wang, R. Z.,Huang, M. C.,&黄美纯.(1996).Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x.http://dx.doi.org/10.1063/1.362896.
MLA	Ke, S. H.,et al."Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x".http://dx.doi.org/10.1063/1.362896 (1996).

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