THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES

CORC > 厦门大学 > 物理技术－已发表论文

	THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES
	Wang, R. Z. ; Ke, S. H. ; Huang, M. C. ; Huang MC(黄美纯)
刊名	http://dx.doi.org/10.1088/0953-8984/5/40/009
	1993-10-04
关键词	BRILLOUIN ZONE SPECIAL POINTS BAND OFFSETS HETEROJUNCTIONS ENERGY
英文摘要	The hetero-interface of the common-anion superlattice (SL) (GaAs)3(AlAs)3(001) is on the As atomic plane, while that of the non-common-ion SL (AlAs)3(GeGe)3(001) is between the two atomic planes of As and Ge or of Ge and Al. In this paper, the self-consistent electronic structure calculation is reported for the two structures. The frozen-shape approach is used to determine the average bond energy and the valence band maximum in each molecular layer of the SL, and to investigate the relation between the interface structure and the internal electrical field. The results show that a large internal electric field exists in the non-common-ion SL but does not in the common-anion SL.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70570]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Wang, R. Z.,Ke, S. H.,Huang, M. C.,et al. THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES[J]. http://dx.doi.org/10.1088/0953-8984/5/40/009,1993.
APA	Wang, R. Z.,Ke, S. H.,Huang, M. C.,&黄美纯.(1993).THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES.http://dx.doi.org/10.1088/0953-8984/5/40/009.
MLA	Wang, R. Z.,et al."THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES".http://dx.doi.org/10.1088/0953-8984/5/40/009 (1993).