THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES | |
Wang, R. Z. ; Ke, S. H. ; Huang, M. C. ; Huang MC(黄美纯) | |
刊名 | http://dx.doi.org/10.1088/0953-8984/5/40/009
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1993-10-04 | |
关键词 | BRILLOUIN ZONE SPECIAL POINTS BAND OFFSETS HETEROJUNCTIONS ENERGY |
英文摘要 | The hetero-interface of the common-anion superlattice (SL) (GaAs)3(AlAs)3(001) is on the As atomic plane, while that of the non-common-ion SL (AlAs)3(GeGe)3(001) is between the two atomic planes of As and Ge or of Ge and Al. In this paper, the self-consistent electronic structure calculation is reported for the two structures. The frozen-shape approach is used to determine the average bond energy and the valence band maximum in each molecular layer of the SL, and to investigate the relation between the interface structure and the internal electrical field. The results show that a large internal electric field exists in the non-common-ion SL but does not in the common-anion SL. |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/70570] ![]() |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | Wang, R. Z.,Ke, S. H.,Huang, M. C.,et al. THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES[J]. http://dx.doi.org/10.1088/0953-8984/5/40/009,1993. |
APA | Wang, R. Z.,Ke, S. H.,Huang, M. C.,&黄美纯.(1993).THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES.http://dx.doi.org/10.1088/0953-8984/5/40/009. |
MLA | Wang, R. Z.,et al."THE INTERFACE CHARGE-TRANSFER AND INTERNAL ELECTRIC-FIELDS IN COMMON-ANION AND NON-COMMON-ION SUPERLATTICES".http://dx.doi.org/10.1088/0953-8984/5/40/009 (1993). |
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