VALENCE-BAND LINEUPS AT HIGHLY STRAINED SI-INP, GE-INAS, AND SI-GE INTERFACES

CORC > 厦门大学 > 物理技术－已发表论文

	VALENCE-BAND LINEUPS AT HIGHLY STRAINED SI-INP, GE-INAS, AND SI-GE INTERFACES
	Ke, S. H. ; Wang, R. Z. ; Huang, M. C. ; Huang MC(黄美纯)
刊名	http://dx.doi.org/10.1016/0038-1098(94)00888-4
	1995-03
关键词	OFFSETS HETEROJUNCTIONS SYSTEM
英文摘要	This paper reports a theoretical study on the valence-band lineups at highly strained Si-InP, Ge-InAs and Si-Ge interfaces by combining average bond energy theory and deformation potential method. The effect of the shallow d-orbitals in In-a;tom on the valence-band lineup is investigated. Three typical strain conditions are calculated for each interface system. The dependence of the lineups on the strain condition are demonstrated quantitatively. It is found that the offset between the average energies of valence-band maximum is affected little by the elastic strain for the three interface systems, however, those between the topmost valence-band states (Delta E(u)) is closely related to the strain condition. The change regions of Delta E(v) are -0.39 similar to-1.23eV, -0.49 similar to-1.32eV and 0.22 similar to 0.74eV for Si-InP, Ge-InAs and Si-Ge systems, respectively. It is demonstrated tl;at this strong dependence is due to the uniaxial component of the strain and its interaction with the spin-orbit splitting. Our results for Si-Ge system are in good agreement with the data given by x-ray photoemission measurement and supercell selfconsistent calculations by ab initio pseudopotential methods. Our results for Ge/InP system are consistent with the experimental data of synchrotron radiation photoemission.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/70548]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Ke, S. H.,Wang, R. Z.,Huang, M. C.,et al. VALENCE-BAND LINEUPS AT HIGHLY STRAINED SI-INP, GE-INAS, AND SI-GE INTERFACES[J]. http://dx.doi.org/10.1016/0038-1098(94)00888-4,1995.
APA	Ke, S. H.,Wang, R. Z.,Huang, M. C.,&黄美纯.(1995).VALENCE-BAND LINEUPS AT HIGHLY STRAINED SI-INP, GE-INAS, AND SI-GE INTERFACES.http://dx.doi.org/10.1016/0038-1098(94)00888-4.
MLA	Ke, S. H.,et al."VALENCE-BAND LINEUPS AT HIGHLY STRAINED SI-INP, GE-INAS, AND SI-GE INTERFACES".http://dx.doi.org/10.1016/0038-1098(94)00888-4 (1995).