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Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells
Pan, S. W. ; Zhou, B. ; Chen, Rui ; Chen, S. Y. ; Li, Cheng ; Huang, Wei ; Lai, H. K. ; Sun, H. D. ; Chen SY(陈松岩)
刊名http://dx.doi.org/10.1063/1.3653960
2011-11-15
关键词ROOM-TEMPERATURE SI NANOCRYSTALS VISIBLE PHOTOLUMINESCENCE SILICON NANOCRYSTALS OPTICAL MICROCAVITY ALLOY NANOCRYSTALS THERMAL-EXPANSION POROUS SILICON MULTILAYERS COEFFICIENT
英文摘要Nation Natural Science Foundation of China [61176050, 61036003, 61176092, 60837001]; National Basic Research Program of China [2012CB933503]; Fundamental Research Funds for the Central Universities [2010121056]; We present the systematic investigations of the microcavity effects from SiGe/Si heterogeneous nanorods (HNRs) prepared by electrochemical anodization of SiGe/Si multiple quantum wells. Visible photoluminescence (PL) emission with narrow bandwidth is observed because of the wavelength selective effect of the microcavity. The resonance of the microcavity is confirmed by the temperature dependent PL measurement, which is consistent with the prediction from the thermo-optic effect. Furthermore, electroluminescence from the ITO/i-SiGe/Si HNR/n(-)-Si diode shows multiple peak emissions under low current density, which is in good agreement with the PL results. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3653960]
语种英语
内容类型期刊论文
源URL[http://dspace.xmu.edu.cn/handle/2288/70206]  
专题物理技术-已发表论文
推荐引用方式
GB/T 7714
Pan, S. W.,Zhou, B.,Chen, Rui,et al. Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells[J]. http://dx.doi.org/10.1063/1.3653960,2011.
APA Pan, S. W..,Zhou, B..,Chen, Rui.,Chen, S. Y..,Li, Cheng.,...&陈松岩.(2011).Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells.http://dx.doi.org/10.1063/1.3653960.
MLA Pan, S. W.,et al."Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells".http://dx.doi.org/10.1063/1.3653960 (2011).
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