Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression

CORC > 厦门大学 > 物理技术－已发表论文

	Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression
	Zhang, Y. ; Wen, Y. H. ; Zheng, J. C. ; Zhu, Z. Z. ; Zheng JC(郑金成)
刊名	http://dx.doi.org/10.1063/1.3104852
	2009-03-16
关键词	NANOBELTS NANOSTRUCTURES
英文摘要	National Natural Science Foundation of China [10702056, 10774124]; Program for New Century Excellent Talents in Fujian Province University, China; The direct to indirect band gap transition in ultrathin [0001] ZnO nanowires with the structural transformation from the regular wurtzite structure to a more close-packed hexagonal structure during uniaxial compression is studied by using the first-principles calculations. The results show that all ZnO nanowires exhibit direct band gap in wurtzite structure and indirect band gap in hexagonal structure. For the same wire the band gap in hexagonal structure is smaller than that in wurtzite structure. The origin of the band gap transition from direct to indirect one is discussed.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69972]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhang, Y.,Wen, Y. H.,Zheng, J. C.,et al. Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression[J]. http://dx.doi.org/10.1063/1.3104852,2009.
APA	Zhang, Y.,Wen, Y. H.,Zheng, J. C.,Zhu, Z. Z.,&郑金成.(2009).Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression.http://dx.doi.org/10.1063/1.3104852.
MLA	Zhang, Y.,et al."Direct to indirect band gap transition in ultrathin ZnO nanowires under uniaxial compression".http://dx.doi.org/10.1063/1.3104852 (2009).