Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy

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	Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy
	Zhou, B ; Pan, SW ; Chen, SY ; Li, C ; Lai, HK ; Yu, JZ ; Zhu, XF ; Li C(李成)
刊名	http://dx.doi.org/10.1016/j.jlumin.2009.04.033
	2009-09
关键词	SILICON THIN-FILMS VISIBLE PHOTOLUMINESCENCE POROUS SI1-XGEX QUANTUM CONFINEMENT SI NANOCRYSTALS DEFECTS GROWTH WELLS
英文摘要	Nation Natural Science Foundation of China [50672079, 60676027, 60837001]; National Basic Research Program of China (973 Program) [2007CB613404]; MOST International Sci & Tech Cooperation and Exchange Special Fund [2008DFA51230]; A two-step approach of preparation for SiGe/Si heterogeneous nanostructures, which combined with ultra-high vacuum chemical deposition and electrochemical anodization techniques, is demonstrated. Uniformly distributed nanostructures with a quite uniform distribution of size and morphology are obtained. A strong room-temperature photoluminescence from the nanostructures was observed with a narrow full-width at half-maximum of around 110 meV. The possible origins of the two main peaks at around 1.6 and 1.8 eV have been discussed in detail. The two-step approach is proved to be a promising method to fabricate new Si-based optoelectronic materials. (C) 2009 Elsevier B.V. All rights reserved.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69515]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Zhou, B,Pan, SW,Chen, SY,et al. Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy[J]. http://dx.doi.org/10.1016/j.jlumin.2009.04.033,2009.
APA	Zhou, B.,Pan, SW.,Chen, SY.,Li, C.,Lai, HK.,...&李成.(2009).Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy.http://dx.doi.org/10.1016/j.jlumin.2009.04.033.
MLA	Zhou, B,et al."Photoluminescence from heterogeneous SiGe/Si nanostructures prepared via a two-step approach strategy".http://dx.doi.org/10.1016/j.jlumin.2009.04.033 (2009).