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Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure
Wang,QM ; Li,SP ; Tu,XG ; Yu,YD ; Chen,P ; Kang,JY ; Yu,JZ ; Cai,DJ ; Zuo,YH ; Li SP(李书平)
刊名http://dx.doi.org/10.1063/1.2918449
2008-04-21
关键词MACH-ZEHNDER INTERFEROMETER GAN THIN-FILMS 2ND-HARMONIC GENERATION ELECTROOPTIC COEFFICIENTS ELECTROREFLECTANCE SUSCEPTIBILITIES
英文摘要We present an experimental demonstration of the interaction between the intrinsic second- and third-order optical fields in an Al(0.53)Ga(0.47)N/GaN heterostructure. The sample was deposited by metal-organic chemical vapor deposition on (0001) sapphire. The nonlinear optical coefficients of the sample, which were measured with a Mach-Zehnder interferometer system, quadratically increase with the applied modulating voltage, indicating the existence of the third-order optical field. The third-order signal was then detected by the Z-scan method and we calculated the built-in dc field on the AlGaN/GaN interface to confirm the strong interaction between the intrinsic second- and third-order optical fields. (c) 2008 American Institute of Physics.
语种英语
内容类型期刊论文
源URL[http://dspace.xmu.edu.cn/handle/2288/69460]  
专题物理技术-已发表论文
推荐引用方式
GB/T 7714
Wang,QM,Li,SP,Tu,XG,et al. Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure[J]. http://dx.doi.org/10.1063/1.2918449,2008.
APA Wang,QM.,Li,SP.,Tu,XG.,Yu,YD.,Chen,P.,...&李书平.(2008).Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure.http://dx.doi.org/10.1063/1.2918449.
MLA Wang,QM,et al."Interaction between the intrinsic second- and third-order optical fields in an Al053Ga047N/GaN heterostructure".http://dx.doi.org/10.1063/1.2918449 (2008).
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