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	Appllications of average-bond-energy method in strained-layer heterojunction band offset
	Cai,SH ; Li,SP ; Wang,RZ ; Zheng,YM ; He,GM ; Li SP(李书平)
	2000-08
关键词	SCHOTTKY-BARRIER HEIGHTS MODEL
英文摘要	We have extended the average-bond-energy method to the study of strained-layer heterojunction band offset. Through a careful study of the effect of hydrostatic strain and uniaxial strain on band offset parameter E-mv, we find that the average band offset parameter E-mv,E-av( E-mv,E-av= E-m -E-v,E-av) is largely kept unchanged under different strain conditions. So, in the calculation of strained-layer band offset parameter E-mv, it is only required the unstrained band offset parameter E-mv,E-0, a deformation parameter b and the experimental value of spin-orbit splitting Delta(0) to calculate the value of strained-layer E-mv by simple algebraic operation. Obviously, it will be very convenient to calculate the valence band offset of heterojunction. The simplifed calculation scheme has the characteristic of small calculation amount and the calculation reliability can be improved by using the experimental value.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69456]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Cai,SH,Li,SP,Wang,RZ,et al. Appllications of average-bond-energy method in strained-layer heterojunction band offset[J],2000.
APA	Cai,SH,Li,SP,Wang,RZ,Zheng,YM,He,GM,&李书平.(2000).Appllications of average-bond-energy method in strained-layer heterojunction band offset..
MLA	Cai,SH,et al."Appllications of average-bond-energy method in strained-layer heterojunction band offset".(2000).

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