Transparent and Flexible Graphene Charge-Trap Memory | |
Kim, Sung Min ; Song, Emil B. ; Lee, Sejoon ; Zhu, Jinfeng ; Seo, David H. ; Mecklenburg, Matthew ; Seo, Sunae ; Wang, Kang L. ; Zhu JF(朱锦锋) | |
刊名 | http://dx.doi.org/10.1021/nn302193q
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2012-09 | |
关键词 | graphene nonvolatile memory charge-trap memory transparent flexible |
英文摘要 | A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (similar to 110 degrees C). The GCTM exhibits memory functionality of similar to 8.6 V memory window and 30% data retention per 10 years, while maintaining similar to 80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex. |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/69443] ![]() |
专题 | 物理技术-已发表论文 |
推荐引用方式 GB/T 7714 | Kim, Sung Min,Song, Emil B.,Lee, Sejoon,et al. Transparent and Flexible Graphene Charge-Trap Memory[J]. http://dx.doi.org/10.1021/nn302193q,2012. |
APA | Kim, Sung Min.,Song, Emil B..,Lee, Sejoon.,Zhu, Jinfeng.,Seo, David H..,...&朱锦锋.(2012).Transparent and Flexible Graphene Charge-Trap Memory.http://dx.doi.org/10.1021/nn302193q. |
MLA | Kim, Sung Min,et al."Transparent and Flexible Graphene Charge-Trap Memory".http://dx.doi.org/10.1021/nn302193q (2012). |
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