Transparent and Flexible Graphene Charge-Trap Memory

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	Transparent and Flexible Graphene Charge-Trap Memory
	Kim, Sung Min ; Song, Emil B. ; Lee, Sejoon ; Zhu, Jinfeng ; Seo, David H. ; Mecklenburg, Matthew ; Seo, Sunae ; Wang, Kang L. ; Zhu JF(朱锦锋)
刊名	http://dx.doi.org/10.1021/nn302193q
	2012-09
关键词	graphene nonvolatile memory charge-trap memory transparent flexible
英文摘要	A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (similar to 110 degrees C). The GCTM exhibits memory functionality of similar to 8.6 V memory window and 30% data retention per 10 years, while maintaining similar to 80% of transparency in the visible wavelength. Under both tensile and compressive stress, the GCTM shows minimal effect on the program/erase states and the on-state current. This can be utilized for transparent and flexible electronics that require integration of logic, memory, and display on a single substrate with high transparency and endurance under flex.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69443]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Kim, Sung Min,Song, Emil B.,Lee, Sejoon,et al. Transparent and Flexible Graphene Charge-Trap Memory[J]. http://dx.doi.org/10.1021/nn302193q,2012.
APA	Kim, Sung Min.,Song, Emil B..,Lee, Sejoon.,Zhu, Jinfeng.,Seo, David H..,...&朱锦锋.(2012).Transparent and Flexible Graphene Charge-Trap Memory.http://dx.doi.org/10.1021/nn302193q.
MLA	Kim, Sung Min,et al."Transparent and Flexible Graphene Charge-Trap Memory".http://dx.doi.org/10.1021/nn302193q (2012).