Theoretical study of valence-band offsets of strained Si1-x-yGexCy/Si(001) heterostructures

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	Theoretical study of valence-band offsets of strained Si1-x-yGexCy/Si(001) heterostructures
	Wu, L. Q. ; Huang, M. C. ; Li, S. P. ; Zhu, Z. Z. ; Zhuang, B. H. ; Zhu ZZ(朱梓忠)
刊名	http://dx.doi.org/10.1063/1.371389
	1999-10-15
关键词	AVERAGE-BOND-ENERGY SI/SI1-X-YGEXCY HETEROJUNCTIONS DEFORMATION POTENTIALS PSEUDOMORPHIC SI1-YCY ELECTRONIC-PROPERTIES SI INTERFACES SYSTEM SIGEC SUPERLATTICES
英文摘要	We present a theoretical study of the valence-band offsets (VBOs) of the pseudomorphic Si1-x-yGexCy/Si(001) heterojunctions. Our calculation is based on the ab initio pseudopotential method, the virtual-crystal approximation, and the average-bond-energy theory. It is found that the VBO is sensitive to the strain condition. Initial addition of carbon increases the VBO of the relaxed Si1-x-yGexCy/Si(001) heterostructures. For constant Ge fraction, the VBO decreases and increases with increasing the C fraction in the case of the compressive and tensile strains, respectively. The trends of our results are in agreement with those of other theoretical and experimental results. (C) 1999 American Institute of Physics. [S0021-8979(99)01220-7].
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69390]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Wu, L. Q.,Huang, M. C.,Li, S. P.,et al. Theoretical study of valence-band offsets of strained Si1-x-yGexCy/Si(001) heterostructures[J]. http://dx.doi.org/10.1063/1.371389,1999.
APA	Wu, L. Q.,Huang, M. C.,Li, S. P.,Zhu, Z. Z.,Zhuang, B. H.,&朱梓忠.(1999).Theoretical study of valence-band offsets of strained Si1-x-yGexCy/Si(001) heterostructures.http://dx.doi.org/10.1063/1.371389.
MLA	Wu, L. Q.,et al."Theoretical study of valence-band offsets of strained Si1-x-yGexCy/Si(001) heterostructures".http://dx.doi.org/10.1063/1.371389 (1999).