Ab initio study of electronic structure of strained Si1-x-yGexCy/Ge(001)

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	Ab initio study of electronic structure of strained Si1-x-yGexCy/Ge(001)
	Wu, L. Q. ; Huang, M. C. ; Li, S. P. ; Zhu, Z. Z. ; Zhu ZZ(朱梓忠)
刊名	http://dx.doi.org/10.1007/s100510051030
	1999-12
关键词	VALENCE-BAND OFFSETS HETEROJUNCTION DISCONTINUITIES ALLOYS HETEROSTRUCTURES POTENTIALS SI(001) SYSTEM GAP
英文摘要	The ab initio pseudopotential method within the local density functional theory and virtual-crystal approximation is used to study the band gap of the Si1-x-yGexCy (y less than or equal to 0.09) alloys on a Ge(001) substrate. The heterojunction discontinuities are also investigated in the framework of the average bond energy theory in conjunction with the deformation potential method. The calculated results show that the energy gap still remains indirect and only a small amount of C could cause the energy gap to be shrunk significantly. The top of the valence bands of the strained Si1-x-yGexCy alloys on Ge(001) is significantly lifted and even could be greatly higher than that of Ge by the addition of small amounts of carbon. The trends of our results are consistent with other theoretical data.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69354]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Wu, L. Q.,Huang, M. C.,Li, S. P.,et al. Ab initio study of electronic structure of strained Si1-x-yGexCy/Ge(001)[J]. http://dx.doi.org/10.1007/s100510051030,1999.
APA	Wu, L. Q.,Huang, M. C.,Li, S. P.,Zhu, Z. Z.,&朱梓忠.(1999).Ab initio study of electronic structure of strained Si1-x-yGexCy/Ge(001).http://dx.doi.org/10.1007/s100510051030.
MLA	Wu, L. Q.,et al."Ab initio study of electronic structure of strained Si1-x-yGexCy/Ge(001)".http://dx.doi.org/10.1007/s100510051030 (1999).