Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces

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	Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces
	Cai, D. J. ; Kang, J. Y. ; Kang JY(康俊勇) ; Zhu, Z. Z. ; Zhu ZZ(朱梓忠)
刊名	http://dx.doi.org/10.1103/PhysRevB.68.073305
	2003-08-15
关键词	FIELD-EFFECT TRANSISTORS LIGHT-EMITTING-DIODES ELECTRON-GAS OPERATION EPITAXY GROWTH ALGAN
英文摘要	The properties of layer structures in AlxGa1-xN/AlN interfaces were studied by employing first-principles total-energy calculations with density-functional theory. A structural transformation of AlxGa1-xN overlayers from normal wurtzite structure to zinc blende structure was found when the compressive in-plane strain was between two critical values.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69189]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Cai, D. J.,Kang, J. Y.,Kang JY,et al. Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces[J]. http://dx.doi.org/10.1103/PhysRevB.68.073305,2003.
APA	Cai, D. J.,Kang, J. Y.,康俊勇,Zhu, Z. Z.,&朱梓忠.(2003).Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces.http://dx.doi.org/10.1103/PhysRevB.68.073305.
MLA	Cai, D. J.,et al."Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces".http://dx.doi.org/10.1103/PhysRevB.68.073305 (2003).