Misfit dislocations and stresses in GaN epilayers

CORC > 厦门大学 > 物理技术－已发表论文

	Misfit dislocations and stresses in GaN epilayers
	Kang, J. Y. ; Ogawa, T. ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1063/1.120056
	1997-10-20
关键词	LIGHT-SCATTERING TOMOGRAPHY BUFFER LAYER SAPPHIRE GROWTH CRYSTALS DEFECTS
英文摘要	GaN epilayers nitridated initially for different times have been investigated by light scattering tomography (LST) and Raman scattering, In the LST images of the plan-view epilayers, the light scattering defects mainly distribute in [11 (2) under bar 0] directions. The density of the defects is lower in epilayer nitridated initially for a longer time, The defects: are considered to be the straight threading edge dislocations on {1 (1) under bar 00} planes. The Raman shift of E-2 mode is larger in the sample initially nitridated for a longer time, Our results show that the misfit between the GaN epilayer and the Al2O3 substrate is more unfavorably accommodated by the threading edge dislocations in the epilayers initially nitridated for a longer time. (C) 1997 American Institute of Physics.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69162]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Kang, J. Y.,Ogawa, T.,Kang JY. Misfit dislocations and stresses in GaN epilayers[J]. http://dx.doi.org/10.1063/1.120056,1997.
APA	Kang, J. Y.,Ogawa, T.,&康俊勇.(1997).Misfit dislocations and stresses in GaN epilayers.http://dx.doi.org/10.1063/1.120056.
MLA	Kang, J. Y.,et al."Misfit dislocations and stresses in GaN epilayers".http://dx.doi.org/10.1063/1.120056 (1997).