Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss

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	Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss
	Kang, J. Y. ; Fukuda, T. ; Kang JY(康俊勇)
刊名	http://dx.doi.org/10.1016/S0921-5107(00)00351-2
	2000-06-01
关键词	SEGREGATION GRAVITY ALLOYS INSB
英文摘要	InGaSb and Te-doped InSb crystals were grown in a vertical gradient freeze apparatus in the absence and presence of a magnetic field of 80 000 Gauss. Bubbles and cracks in InGaSb were studied by a scanning electron microscope. A number of micro-cracks and several macro-bubbles were observed in the conventionally grown crystals, whereas many micro-bubbles were visible in the crystals grown under the magnetic field. The InGaSb composition distributions were analyzed by energy dispersive X-ray spectroscopy. The composition was distributed more homogeneously in the axial direction, but more inhomogeneously in the radial direction in the crystals grown under the magnetic field. On the other hand, the axial Te profiles in Te-doped InSb were measured by atomic absorption spectrochemical analysis and found to be more uniform in the crystals grown under the magnetic field compared with those grown without the magnetic field. These results showed that the application of the 80.0 kG magnetic field influenced not only the crystal quality, but also the composition profiles by generating a Lorentz force to damp out the molten turbulence and reduce convective velocity. (C) 2000 Elsevier Science S.A. All rights reserved.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/69113]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Kang, J. Y.,Fukuda, T.,Kang JY. Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss[J]. http://dx.doi.org/10.1016/S0921-5107(00)00351-2,2000.
APA	Kang, J. Y.,Fukuda, T.,&康俊勇.(2000).Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss.http://dx.doi.org/10.1016/S0921-5107(00)00351-2.
MLA	Kang, J. Y.,et al."Growth exploration of compositionally uniform bulk semiconductors under a high magnetic field of 80 000 Gauss".http://dx.doi.org/10.1016/S0921-5107(00)00351-2 (2000).