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An average-bond-energy method used for band-offset calculation for a strained heterojunction
Li, S. P. ; Wang, R. Z. ; Zheng, Y. M. ; Cai, S. H. ; He, G. M. ; He GM(何国敏) ; Li SP(李书平) ; Cai SH(蔡淑惠)
刊名http://dx.doi.org/10.1088/0953-8984/12/35/311
2000-09-04
关键词SCHOTTKY-BARRIER HEIGHTS SEMICONDUCTOR HETEROJUNCTIONS DEFORMATION POTENTIALS ELECTRONIC-STRUCTURE PSEUDOPOTENTIALS SUPERLATTICES LINEUPS STATES MODEL
英文摘要We have extended the average-bond-energy method to study the strained-heterojunction band offset. Through a detailed study of the effect of hydrostatic and uniaxial strains on the energy of the average valence band edge E-v.av relative to the average bond energy, we find that E-v.av remains basically unchanged under different strain conditions, and that the deformation potential a(v.av) corresponding to E-v.av is much smaller than the a(v) for other analogous methods. Thus, in the average-bond-energy method, the valence band offset Delta E-v can be obtained neglecting a(v.av). It is only necessary to calculate the valence band maximum energy relative to the average bond energy before the strain and to use the experimental values of the deformation potential b and spin-orbit splitting Delta(0) to determine the splitting value for the valence band. It is not necessary to calculate the band structures under various strain conditions. This simplified calculation method involves only a small calculational burden; therefore, it can conveniently be used to predict the strained-heterojunction band offset.
语种英语
内容类型期刊论文
源URL[http://dspace.xmu.edu.cn/handle/2288/68675]  
专题物理技术-已发表论文
推荐引用方式
GB/T 7714
Li, S. P.,Wang, R. Z.,Zheng, Y. M.,et al. An average-bond-energy method used for band-offset calculation for a strained heterojunction[J]. http://dx.doi.org/10.1088/0953-8984/12/35/311,2000.
APA Li, S. P..,Wang, R. Z..,Zheng, Y. M..,Cai, S. H..,He, G. M..,...&蔡淑惠.(2000).An average-bond-energy method used for band-offset calculation for a strained heterojunction.http://dx.doi.org/10.1088/0953-8984/12/35/311.
MLA Li, S. P.,et al."An average-bond-energy method used for band-offset calculation for a strained heterojunction".http://dx.doi.org/10.1088/0953-8984/12/35/311 (2000).
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