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	Green Emission from a Strain-Modulated InGaN Active Layer
	Wang Guo-Biao ; Xiong Huan ; Lin You-Xi ; Fang Zhi-Lai ; Kang Jun-Yong ; Kang JY(康俊勇) ; Duan Yu ; Shen Wen-Zhong ; Wang GB(王国彪) ; Xiong H(熊欢) ; Lin YX(林友熙) ; Fang ZL(方志来) ; Duan Y(段雨) ; Shen WZ(沈文忠)
	2012-06
英文摘要	Strain-induced quantum dots (QDs) like island formations are demonstrated to effectively suppress pits/dislocation generation in high indium content (26.8%) InGaN active layers. In addition to the strain redistribution in the QD-like islands, strain modulation on the InGaN active layers by using the GaN island capping is employed to form an increased surface potential barrier around the dislocation cores, which inhibits the carrier transport to the surrounding dislocations. Cathodoluminescence shows distinct double-peak emissions at 503 nm and 444 nm, corresponding to the In-rich QD-like emission and the normal quantum well emission, respectively. The QD-like emission becomes dominated in photoluminescence due to the carrier localization effect of In-rich InGaN QDs at relatively low "carrier injection current". Accordingly, green emission may be enhanced by the following origins: (1) reduction in pits/dislocations density, (2) carrier localization and strain reduction in QDs, (3) strain modulation by GaN island capping, (4) enhanced light extraction with faceted GaN islands on the surface.; National Natural Science Foundation of China [60876008, 61076091]; Program for New Century Excellent Talents in Fujian Province University
语种	英语
出版者	IOP PUBLISHING LTD
内容类型	期刊论文
源URL	[http://dx.doi.org/10.1088/0256-307X/29/6/068101]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Wang Guo-Biao,Xiong Huan,Lin You-Xi,et al. Green Emission from a Strain-Modulated InGaN Active Layer[J],2012.
APA	Wang Guo-Biao.,Xiong Huan.,Lin You-Xi.,Fang Zhi-Lai.,Kang Jun-Yong.,...&沈文忠.(2012).Green Emission from a Strain-Modulated InGaN Active Layer..
MLA	Wang Guo-Biao,et al."Green Emission from a Strain-Modulated InGaN Active Layer".(2012).

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