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	A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1-xGex Epilayer on Si Substrates
	Tang, Mengrao ; Li, Cheng ; Wu, Zheng ; Liu, Guanzhou ; Huang, Wei ; Lai, Hongkai ; Chen, Songyan ; Chen SY(陈松岩)
	2012-09
关键词	Nickel alloys Schottky-barrier height (SBH) silicon-germanium
英文摘要	Formation and electrical properties of nickel silicidized n-type Si and Si1-xGex epilayers on a Si substrate are comparatively studied. The improvement of thermal stability of germanosilicide can be attributed to the thicker NiSi(Ge) film and the delay of phase transformation with Ge incorporation, as well as the reduction in interface energy with Ge segregation at the interface. The Schottky-barrier heights (SBHs) of the contacts formed by sputtering Ni on the strained Si1-xGex (x = 0.07 and 0.2) epilayers significantly increase after germanosilicidation and with increasing annealing temperature, markedly contrasting to the quick drop of SBH of the silicidized Si contact made by the same process. The raise of SBH of the Ni/Si1-xGex contact after germanosilicidation and with increasing annealing temperature is dominated by a Fermi-level pinning effect due to Ge segregation at the interface and the generation of dislocations driven by strain relaxation in the Si1-xGex epilayers, rather than the reduction in work function when Ni transforms to NiSiGe during the germanosilicidation process.; National Basic Research Program of China [2012CB933503]; National Natural Science Foundation of China [61176092, 61036003, 60837001]; Ph.D. Programs Foundation of Ministry of Education of China [20110121110025]; Fundamental Research Funds for the Central Universities [2010121056]
语种	英语
出版者	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
内容类型	期刊论文
源URL	[http://dx.doi.org/10.1109/TED.2012.2202287]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Tang, Mengrao,Li, Cheng,Wu, Zheng,et al. A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1-xGex Epilayer on Si Substrates[J],2012.
APA	Tang, Mengrao.,Li, Cheng.,Wu, Zheng.,Liu, Guanzhou.,Huang, Wei.,...&陈松岩.(2012).A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1-xGex Epilayer on Si Substrates..
MLA	Tang, Mengrao,et al."A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1-xGex Epilayer on Si Substrates".(2012).

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