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	Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio
	Hong, Rongdun ; Hong RD(洪荣墩) ; Zhou, Yi ; Xie, Yannan ; Xie, Yannan ; Chen, Xiaping ; Zhang, Zifeng ; Wang, Kang L. ; Wu, Zhengyun
	2012-09
关键词	PHOTODETECTORS PERFORMANCE DETECTORS LAYER
英文摘要	A 4H-SiC based separate-absorption-multiplication (SAM) avalanche photodiode with a nanoscale multiplication region and a bulk absorption region is proposed and its optoelectronic performance is modeled. The results show that the avalanche breakdown voltage of the device is found to be dependent on the illumination condition. This is attributed to the existence of an illumination-dependent hole potential well in the upper center of the absorption region. Based on the illumination-dependence of avalanche breakdown voltage, a self-quenching and an ultrahigh UV/visible rejection ratio have been realized in this structure. (c) 2012 Optical Society of America; National Natural Science Foundation of China [61176049]; Natural Science Foundation of Fujian Province [2009J05151]
语种	英语
出版者	OPTICAL SOC AMER
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/14732]
专题	物理技术－已发表论文
推荐引用方式 GB/T 7714	Hong, Rongdun,Hong RD,Zhou, Yi,et al. Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio[J],2012.
APA	Hong, Rongdun.,洪荣墩.,Zhou, Yi.,Xie, Yannan.,Xie, Yannan.,...&Wu, Zhengyun.(2012).Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio..
MLA	Hong, Rongdun,et al."Nanoscale avalanche photodiode with self-quenching and ultrahigh ultraviolet/visible rejection ratio".(2012).

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