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	Three-dimensional electrochemical micromachining on metal and semiconductor by confined etchant layer technique (CELT)
	Tang, Jing ; Tang J(汤儆) ; Zhang, Li ; Jiang, Li M. ; Xie, Lei ; Zu, Yan B. ; Tian, Zhao W.
	2007
关键词	FEEDBACK MODE N-GAAS MICROSCOPE SILICON COPPER TITANIUM
英文摘要	We developed a technology for three dimensional (3D) electrochemical micromachining. The confined etchant layer technique (CELT) has been applied to achieve effective three-dimensional (3D) micromachining on different kinds of metals and semiconductors. This technique operates on the basis of indirect electrochemical process, and is a low-cost technique for microfabrication of arbitrary 3D structures in a single step.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/62660]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Tang, Jing,Tang J,Zhang, Li,et al. Three-dimensional electrochemical micromachining on metal and semiconductor by confined etchant layer technique (CELT)[J],2007.
APA	Tang, Jing.,汤儆.,Zhang, Li.,Jiang, Li M..,Xie, Lei.,...&Tian, Zhao W..(2007).Three-dimensional electrochemical micromachining on metal and semiconductor by confined etchant layer technique (CELT)..
MLA	Tang, Jing,et al."Three-dimensional electrochemical micromachining on metal and semiconductor by confined etchant layer technique (CELT)".(2007).

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