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	Surface Ramam spectrpscopy for in situ investigating silicon etching process
	Liu, FM ; Liu FM(刘峰名) ; Ren, B ; Ren B(任斌) ; Tian, ZQ ; Tian ZQ(田中群)
	2000
关键词	Raman microscopy silicon surface oxidation
英文摘要	In situ surface Raman spectroscopy has been extended to study silicon electrode surfaces by optimizing the Raman system and the surface roughening method. The time-dependent etching processes were monitored in a dilute HF aqueous solution and the initial oxidation processes of the hydrogen - terminated surface in different pHs were studied at the open circuit potential. The results indicate that the silicon surface could be overwhelmingly terminated with hydrogen rather than fluorine in the HF-based solution. The smoothening effect of OH- on the silicon surface is through the attack of the = SiH2 site. It demonstrates that Raman spectroscopy is a powerful in situ technique for investigating the etching process of silicon surface.
语种	中文
出版者	BEIJING UNIV PRESS
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/12756]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Liu, FM,Liu FM,Ren, B,et al. Surface Ramam spectrpscopy for in situ investigating silicon etching process[J],2000.
APA	Liu, FM,刘峰名,Ren, B,任斌,Tian, ZQ,&田中群.(2000).Surface Ramam spectrpscopy for in situ investigating silicon etching process..
MLA	Liu, FM,et al."Surface Ramam spectrpscopy for in situ investigating silicon etching process".(2000).

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