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	Cu micropatterning on n-Si(111) by selective electrochemical deposition using an agarose stamp
	Tang, Jing ; Tang J(汤儆) ; Zhuang, Jin L. ; Zhang, Li. ; Wang, Wen H. ; Tian, Zhao W. ; Tian ZW(田昭武)
	2008-03
关键词	agarose electrochemical deposition copper micropatterning
英文摘要	Electrochemical wet stamping (E-WETS) was applied for selective deposition of Cu on n-Si(1 1 1) using an agarose stamp. The agarose stamp was first prepared by molding against a master with an array of depressions using its property of plasticity. Cu microstructures were then fabricated directly by preferential electrochemical deposition involving contact between the stamp and a n-Si(1 1 1) workpiece. The gel stamp behaves as a current flow channel between the working electrode and the counter electrode. Furthermore, it simultaneously supplies electrolyte to preferential parts of the n-Si surface. Cu microstructures complementary of those on the master were patterned on the workpiece. The lateral deviation of the fabricated microstructures from those on the master was approximately 0.6%. (C) 2008 Elsevier Ltd. All rights reserved.
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
内容类型	期刊论文
源URL	[http://dx.doi.org/doi:10.1016/j.electacta.2008.03.006]
专题	化学化工－已发表论文
推荐引用方式 GB/T 7714	Tang, Jing,Tang J,Zhuang, Jin L.,et al. Cu micropatterning on n-Si(111) by selective electrochemical deposition using an agarose stamp[J],2008.
APA	Tang, Jing.,汤儆.,Zhuang, Jin L..,Zhang, Li..,Wang, Wen H..,...&田昭武.(2008).Cu micropatterning on n-Si(111) by selective electrochemical deposition using an agarose stamp..
MLA	Tang, Jing,et al."Cu micropatterning on n-Si(111) by selective electrochemical deposition using an agarose stamp".(2008).

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