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用射频化学气相沉积法制备P型微晶金刚石薄膜; Deposition p-Type Microcrystalline diamond Films on Quartz Grass Using Radio Frequency PCVD
姬荣斌 ; 张志林 ; 刘祖刚 ; 许少鸿
1996
关键词PCVD 金刚石 电阻率 空穴迁移率 PCVD diamond electric resistivity hole mobility
英文摘要利用射频化学气相沉积法,通过硼的掺杂,在石英玻璃衬底上生长出P型微晶金刚石薄膜,范德堡法的测试表明,我们得到的薄膜最小电阻率为4x10-2Ω.CM,最大空穴迁移率为50CM/V.S;从电阻率与温度关系近似计算出杂质激活能; p-Type polycrystalline diamond Films were prepared on quartz grass by radio Frequency plasma assisted chemical vapor deposition (PCVD), and doped with boron.The surFace morphologyl crystal structure and some physical properties of the Films were examined by transmission electron microscopy, UV-visible transmission spectrum.The test of Van der Pauw method comFirmed that the lowest electric resistivity of the Films is 5 × 10-2.cm, and the highest hole mobility of the Film is 50cm2/V.s.
语种zh_CN
内容类型期刊论文
源URL[http://dspace.xmu.edu.cn/handle/2288/98476]  
专题材料学院-已发表论文
推荐引用方式
GB/T 7714
姬荣斌,张志林,刘祖刚,等. 用射频化学气相沉积法制备P型微晶金刚石薄膜, Deposition p-Type Microcrystalline diamond Films on Quartz Grass Using Radio Frequency PCVD[J],1996.
APA 姬荣斌,张志林,刘祖刚,&许少鸿.(1996).用射频化学气相沉积法制备P型微晶金刚石薄膜..
MLA 姬荣斌,et al."用射频化学气相沉积法制备P型微晶金刚石薄膜".(1996).
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