用射频化学气相沉积法制备P型微晶金刚石薄膜; Deposition p-Type Microcrystalline diamond Films on Quartz Grass Using Radio Frequency PCVD | |
姬荣斌 ; 张志林 ; 刘祖刚 ; 许少鸿 | |
1996 | |
关键词 | PCVD 金刚石 电阻率 空穴迁移率 PCVD diamond electric resistivity hole mobility |
英文摘要 | 利用射频化学气相沉积法,通过硼的掺杂,在石英玻璃衬底上生长出P型微晶金刚石薄膜,范德堡法的测试表明,我们得到的薄膜最小电阻率为4x10-2Ω.CM,最大空穴迁移率为50CM/V.S;从电阻率与温度关系近似计算出杂质激活能; p-Type polycrystalline diamond Films were prepared on quartz grass by radio Frequency plasma assisted chemical vapor deposition (PCVD), and doped with boron.The surFace morphologyl crystal structure and some physical properties of the Films were examined by transmission electron microscopy, UV-visible transmission spectrum.The test of Van der Pauw method comFirmed that the lowest electric resistivity of the Films is 5 × 10-2.cm, and the highest hole mobility of the Film is 50cm2/V.s. |
语种 | zh_CN |
内容类型 | 期刊论文 |
源URL | [http://dspace.xmu.edu.cn/handle/2288/98476] |
专题 | 材料学院-已发表论文 |
推荐引用方式 GB/T 7714 | 姬荣斌,张志林,刘祖刚,等. 用射频化学气相沉积法制备P型微晶金刚石薄膜, Deposition p-Type Microcrystalline diamond Films on Quartz Grass Using Radio Frequency PCVD[J],1996. |
APA | 姬荣斌,张志林,刘祖刚,&许少鸿.(1996).用射频化学气相沉积法制备P型微晶金刚石薄膜.. |
MLA | 姬荣斌,et al."用射频化学气相沉积法制备P型微晶金刚石薄膜".(1996). |
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