Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites

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	Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites
	Wen, Qingbo ; Xu, Yeping ; Xu, Binbin ; Fasel, Claudia ; Guillon, Ol ; Buntkowsky, Gerd ; Yu, Zhaoju ; Riedel, Ralf ; Ionescu, Emanuel ; Yu ZJ(余兆菊)
刊名	http://dx.doi.org/10.1039/c4nr03376k
	2014
关键词	Ceramic materials Electric conductivity Grain growth Hafnium In situ processing Mass spectrometry Nanocomposites Nuclear magnetic resonance Nuclear magnetic resonance spectroscopy Polysilanes Silicon carbide Sintering Spark plasma
英文摘要	A novel single-source precursor was synthesized by the reaction of an allyl hydrido polycarbosilane (SMP10) and tetrakis(dimethylamido)hafnium(iv) (TDMAH) for the purpose of preparing dense monolithic SiC/HfCxN1-x-based ultrahigh temperature ceramic nanocomposites. The materials obtained at different stages of the synthesis process were characterized via Fourier transform infrared (FT-IR) as well as nuclear magnetic resonance (NMR) spectroscopy. The polymer-to-ceramic transformation was investigated by means of MAS NMR and FT-IR spectroscopy as well as thermogravimetric analysis (TGA) coupled with in situ mass spectrometry. Moreover, the microstructural evolution of the synthesized SiHfCN-based ceramics annealed at different temperatures ranging from 1300°C to 1800°C was characterized by elemental analysis, X-ray diffraction, Raman spectroscopy and transmission electron microscopy (TEM). Based on its high temperature behavior, the amorphous SiHfCN-based ceramic powder was used to prepare monolithic SiC/HfCxN1-x-based nanocomposites using the spark plasma sintering (SPS) technique. The results showed that dense monolithic SiC/HfCxN1-x-based nanocomposites with low open porosity (0.74 vol%) can be prepared successfully from single-source precursors. The average grain size of both HfC0.83N0.17 and SiC phases was found to be less than 100 nm after SPS processing owing to a unique microstructure: HfC0.83N0.17 grains were embedded homogeneously in a β-SiC matrix and encapsulated by in situ formed carbon layers which acted as a diffusion barrier to suppress grain growth. The segregated Hf-carbonitride grains significantly influenced the electrical conductivity of the SPS processed monolithic samples. While Hf-free polymer-derived SiC showed an electrical conductivity of ca. 1.8 S cm-1, the electrical conductivity of the Hf-containing material was analyzed to be ca. 136.2 S cm-1. This journal is
语种	英语
出版者	Royal Society of Chemistry
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/87470]
专题	材料学院－已发表论文
推荐引用方式 GB/T 7714	Wen, Qingbo,Xu, Yeping,Xu, Binbin,et al. Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites[J]. http://dx.doi.org/10.1039/c4nr03376k,2014.
APA	Wen, Qingbo.,Xu, Yeping.,Xu, Binbin.,Fasel, Claudia.,Guillon, Ol.,...&余兆菊.(2014).Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites.http://dx.doi.org/10.1039/c4nr03376k.
MLA	Wen, Qingbo,et al."Single-source-precursor synthesis of dense SiC/HfCxN1-x-based ultrahigh-temperature ceramic nanocomposites".http://dx.doi.org/10.1039/c4nr03376k (2014).