Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5

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	Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5
	Sa, Baisheng ; Zhou, Jian ; Song, Zhitang ; Sun, Zhimei ; Ahuja, Rajeev ; Zhou J(周健) ; Sun ZM(孙志梅)
刊名	http://dx.doi.org/10.1103/PhysRevB.84.085130
	2011-08-26
关键词	BI2TE3 SURFACE
英文摘要	National Natural Science Foundation of China [60976005]; Outstanding Young Scientists Foundation of Fujian Province of China [2010J0103]; program for New Century Excellent Talents in University [NCET-08-0474]; We unraveled the pressure-induced topological insulating behavior in Ge2Sb2Te5 (GST) by means of ab initio calculations. We have shown that the spin-orbit interaction separates the twofold degenerate Ge p(x)p(y) Sb p(x)p(y) Te p(x)p(y) state to an upper and a lower level and enhances the energy level of Ge s Sb s Te p(z)/Ge p(z) Sb p(z) Te s states. Consequently, the sign of parity changes by inversing the characterizations of conduction band minimum and valence band maximum in a certain range of pressures. Moreover, the surface band structure with the Dirac cone feature was observed. The present results suggest that GST-relatedmaterials are a new family of pressure-induced topological insulators.
语种	英语
出版者	PHYS REV B
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/87170]
专题	材料学院－已发表论文
推荐引用方式 GB/T 7714	Sa, Baisheng,Zhou, Jian,Song, Zhitang,et al. Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5[J]. http://dx.doi.org/10.1103/PhysRevB.84.085130,2011.
APA	Sa, Baisheng.,Zhou, Jian.,Song, Zhitang.,Sun, Zhimei.,Ahuja, Rajeev.,...&孙志梅.(2011).Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5.http://dx.doi.org/10.1103/PhysRevB.84.085130.
MLA	Sa, Baisheng,et al."Pressure-induced topological insulating behavior in the ternary chalcogenide Ge2Sb2Te5".http://dx.doi.org/10.1103/PhysRevB.84.085130 (2011).