Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications

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	Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications
	San, Haisheng ; Deng, Zhiqiang ; Yu, Yuxi ; Li, Gang ; Chen, Xuyuan ; Yu YX(余煜玺)
刊名	http://dx.doi.org/10.1088/0960-1317/21/12/125019
	2011-12
关键词	RF-MEMS CAPACITIVE SWITCHES RELIABILITY STATES MODEL
英文摘要	National Natural Science Foundation of China [51075344, 51175444]; Fundamental Research Funds for the Central Universities [2011121002]; Charge-induced failure has been recognized as a primary reliability issue in capacitive micro-actuators. In this paper, we present a simple method to assess the effect of dielectric charging on reliability of a capacitive micro-actuator. By capacitance-voltage measurements for a metal-insulator-semiconductor (MIS) structure, the characteristics of dielectric charging can be investigated, and the obtained results can be used to study the charging behavior of a capacitive micro-actuator. An analytical model based on this method has been established. The silicon-rich nitride film was deposited by low-pressure chemical vapor deposition on silicon substrate. The current-voltage and capacitance-voltage measurements exhibit an asymmetric electrical characteristic under different polarity of stress voltage. The charging parameters of the silicon-rich nitride were extracted by the stretched exponential curve fitting method. This charging behavior suggests that silicon-rich nitride can be negatively or positively charged, and the injection and transport of holes are more favored than the injection and transport of electrons. The charge injection from movable electrode plays a dominant role in the dielectric charging of a capacitive micro-actuator. It is expected that the charge accumulation in dielectrics can be eliminated by employing the bipolar square-wave voltage to actuate a capacitive micro-actuator.
语种	英语
内容类型	期刊论文
源URL	[http://dspace.xmu.edu.cn/handle/2288/59048]
专题	材料学院－已发表论文
推荐引用方式 GB/T 7714	San, Haisheng,Deng, Zhiqiang,Yu, Yuxi,et al. Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications[J]. http://dx.doi.org/10.1088/0960-1317/21/12/125019,2011.
APA	San, Haisheng,Deng, Zhiqiang,Yu, Yuxi,Li, Gang,Chen, Xuyuan,&余煜玺.(2011).Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications.http://dx.doi.org/10.1088/0960-1317/21/12/125019.
MLA	San, Haisheng,et al."Study on dielectric charging in low-stress silicon nitride with the MIS structure for reliable MEMS applications".http://dx.doi.org/10.1088/0960-1317/21/12/125019 (2011).