Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation
Yuan Jingmei ; Yuan Lei ; He HB(贺洪波) ; Yi Kui ; Fan ZX(范正修) ; Shao JD(邵建达)
刊名appl. surf. sci.
2008
卷号254期号:15页码:4864
关键词HfO2/SiO2 multilayer ZrO2 impurity reflectance
ISSN号0169-4332
中文摘要influence of zro2 in hfo2 on the reflectance of hfo2/sio2 multilayer at 248 nm was investigated. two kinds of hfo2 with different zro2 content were chosen as high refractive index material and the same kind of sio2 as low refractive index material to prepare the mirrors by electron-beam evaporation. the impurities in two kinds of hfo2 starting coating materials and in their corresponding single layer thin films were determined through glow discharge mass spectrum (gdms) technology and secondary ion mass spectrometry (sims) equipment, respectively. it showed that between the two kinds of hfo2, either the bulk materials or their corresponding films, the difference of zro2 was much larger than that of the other impurities such as ti and fe. it is the zr element that affects the property of thin films. both in theoretical and in experimental, the mirror prepared with the hfo2 starting material containing more zr content has a lower reflectance. because the extinction coefficient of zirconia is relatively high in uv region, it can be treated as one kind of absorbing defects to influence the optical property of the mirrors. (c) 2008 elsevier b.v. all rights reserved.
学科主题光学薄膜
收录类别EI
语种英语
公开日期2009-09-22
内容类型期刊论文
源URL[http://ir.siom.ac.cn/handle/181231/4756]  
专题上海光学精密机械研究所_光学薄膜技术研究与发展中心
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GB/T 7714
Yuan Jingmei,Yuan Lei,He HB,et al. Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation[J]. appl. surf. sci.,2008,254(15):4864, 4867.
APA Yuan Jingmei,Yuan Lei,贺洪波,Yi Kui,范正修,&邵建达.(2008).Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation.appl. surf. sci.,254(15),4864.
MLA Yuan Jingmei,et al."Influence of ZrO2 in HfO2 on reflectance of HfO2/SiO2 multilayer at 248 nm prepared by electron-beam evaporation".appl. surf. sci. 254.15(2008):4864.
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